IPP040N06N3 G Infineon Technologies
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.47 EUR |
| 10+ | 2.89 EUR |
| 100+ | 2.29 EUR |
| 250+ | 2.11 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.64 EUR |
| 2500+ | 1.57 EUR |
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Technische Details IPP040N06N3 G Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 9, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.
Weitere Produktangebote IPP040N06N3 G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IPP040N06N3 G | Hersteller : Infineon |
auf Bestellung 147000 Stücke: Lieferzeit 21-28 Tag (e) |
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| IPP040N06N3G | Hersteller : Infineon technologies |
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auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
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IPP040N06N3G | Hersteller : Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 9 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
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