Technische Details IPP040N06NXKSA1 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 69A, Power dissipation: 36W, Case: TO220-3, On-state resistance: 4mΩ, Mounting: THT, Gate charge: 38nC, Kind of channel: enhancement.
Weitere Produktangebote IPP040N06NXKSA1 nach Preis ab 1.24 EUR bis 4.29 EUR
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IPP040N06NXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP040N06NXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 69A Power dissipation: 36W Case: TO220-3 On-state resistance: 4mΩ Mounting: THT Gate charge: 38nC Kind of channel: enhancement |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP040N06NXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP040N06NXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 97950 Stücke: Lieferzeit 14-21 Tag (e) |
|
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IPP040N06NXKSA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V |
auf Bestellung 477 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP040N06NXKSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 108+ | 1.34 EUR |
| 114+ | 1.24 EUR |
| IPP040N06NXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220-3
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220-3
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| IPP040N06NXKSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 1.79 EUR |
| IPP040N06NXKSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 97950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 281+ | 1.95 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.56 EUR |
| 10000+ | 1.36 EUR |
| IPP040N06NXKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.29 EUR |
| 50+ | 2.12 EUR |
| 100+ | 1.9 EUR |




