IPP045N10N3 G Infineon Technologies
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 42+ | 3.72 EUR |
| 50+ | 3.45 EUR |
| 100+ | 3.21 EUR |
| 250+ | 2.99 EUR |
| 500+ | 2.8 EUR |
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Technische Details IPP045N10N3 G Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 137A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V.
Weitere Produktangebote IPP045N10N3 G nach Preis ab 2.5 EUR bis 4.86 EUR
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IPP045N10N3 G | Hersteller : Infineon Technologies |
 MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 |
auf Bestellung 4998 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP045N10N3 G | Hersteller : Infineon |
auf Bestellung 86450 Stücke: Lieferzeit 21-28 Tag (e) |
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| IPP045N10N3G | Hersteller : Infineon technologies |
auf Bestellung 254 Stücke: Lieferzeit 21-28 Tag (e) |
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| IPP045N10N3G | Hersteller : Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 137A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V |
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