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IPP050N03LF2SAKSA1

IPP050N03LF2SAKSA1 Infineon Technologies

Infineon_IPP050N03LF2S_DataSheet_v02_00_EN.pdf
Hersteller: Infineon Technologies
MOSFETs IR FET UP TO 60V
auf Bestellung 3082 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.56 EUR
10+0.97 EUR
100+0.64 EUR
500+0.58 EUR
1000+0.5 EUR
2000+0.45 EUR
5000+0.37 EUR
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Technische Details IPP050N03LF2SAKSA1 Infineon Technologies

Description: MOSFET N-CH 30V 50A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 53A (Tc), Rds On (Max) @ Id, Vgs: 4.95mOhm @ 30A, 10V, Power Dissipation (Max): 3.8W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 30µA, Supplier Device Package: PG-TO220-3-U05, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V.

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IPP050N03LF2SAKSA1 IPP050N03LF2SAKSA1 Hersteller : Infineon Technologies Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPP050N03LF2SAKSA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
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