Weitere Produktangebote IPP057N06N3GXKSA1 nach Preis ab 1.4 EUR bis 2.99 EUR
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IPP057N06N3GXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 60V 80A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 58µA Supplier Device Package: PG-TO220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V |
auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP057N06N3GXKSA1 | Infineon Technologies |
MOSFETs N-Ch 60V 80A TO220-3 OptiMOS 3 |
auf Bestellung 365 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP057N06N3GXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
Description: MOSFET N-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 58µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.78 EUR |
| 50+ | 2.24 EUR |
| 100+ | 1.84 EUR |
| IPP057N06N3GXKSA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 80A TO220-3 OptiMOS 3
MOSFETs N-Ch 60V 80A TO220-3 OptiMOS 3
auf Bestellung 365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.99 EUR |
| 10+ | 2.41 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.4 EUR |