IPP069N20NM6AKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 258µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 136A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 258µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.68 EUR |
10+ | 11.72 EUR |
100+ | 9.76 EUR |
500+ | 8.62 EUR |
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Technische Details IPP069N20NM6AKSA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 136A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 100A, 15V, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 258µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 100 V.
Weitere Produktangebote IPP069N20NM6AKSA1 nach Preis ab 7.81 EUR bis 13.76 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP069N20NM6AKSA1 | Hersteller : Infineon Technologies | MOSFET TRENCH >=100V |
auf Bestellung 833 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP069N20NM6AKSA1 | Hersteller : Infineon Technologies | TRENCH >=100V |
Produkt ist nicht verfügbar |