| Anzahl | Preis |
|---|---|
| 1+ | 3.75 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.16 EUR |
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Technische Details IPP083N10N5XKSA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 3.8V @ 49µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IPP083N10N5XKSA1 nach Preis ab 1.66 EUR bis 3.77 EUR
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IPP083N10N5XKSA1 | Infineon Technologies |
 Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 3.8V @ 49µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 203 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPP083N10N5XKSA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.77 EUR |
| 50+ | 1.85 EUR |
| 100+ | 1.66 EUR |