auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.75 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.16 EUR |
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Technische Details IPP083N10N5XKSA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 49µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V.
Weitere Produktangebote IPP083N10N5XKSA1 nach Preis ab 1.66 EUR bis 3.77 EUR
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IPP083N10N5XKSA1 | Hersteller : Infineon Technologies |
 Description: TRENCH >=100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V |
auf Bestellung 203 Stücke: Lieferzeit 10-14 Tag (e) |
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