| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.46 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPP083N10N5XKSA1 Infineon Technologies
Description: TRENCH >=100V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 3.8V @ 49µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IPP083N10N5XKSA1 nach Preis ab 1.98 EUR bis 4.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPP083N10N5XKSA1 | Infineon Technologies |
 Description: TRENCH >=100VInput Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 3.8V @ 49µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 203 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPP083N10N5XKSA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.49 EUR |
| 50+ | 2.2 EUR |
| 100+ | 1.98 EUR |