IPP084N06L3GXKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 60V 50A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 1664 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 380+ | 1.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPP084N06L3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 50A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 34µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V.
Weitere Produktangebote IPP084N06L3GXKSA1 nach Preis ab 1.66 EUR bis 1.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
IPP084N06L3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
|
|
IPP084N06L3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||
 |
IPP084N06L3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||
|
|
IPP084N06L3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||
|
|
IPP084N06L3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 34µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V |
Produkt ist nicht verfügbar |