IPP08CNE8NG Infineon Technologies
auf Bestellung 925 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 341+ | 1.46 EUR |
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Technische Details IPP08CNE8NG Infineon Technologies
Description: MOSFET N-CH 85V 95A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 130µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 85 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V.
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| IPP08CNE8NG | Hersteller : ROCHESTER ELECTRONICS |
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auf Bestellung 425 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP08CNE8N G | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 85V 95A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V |
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