IPP100N06S3-04 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 14230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 314 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details IPP100N06S3-04 Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 14230 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 314 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 4V @ 150µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.