IPP100N06S3L-03 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 230µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
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Technische Details IPP100N06S3L-03 Infineon Technologies
Description: MOSFET N-CH 55V 100A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 26240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 2.2V @ 230µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Qualification: AEC-Q101, Grade: Automotive.