IPP126N10N3GXKSA1 Infineon Technologies
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.46 EUR |
| 500+ | 2.38 EUR |
| 1000+ | 1.65 EUR |
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Technische Details IPP126N10N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 58A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 46µA, Supplier Device Package: PG-TO220-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V.
Weitere Produktangebote IPP126N10N3GXKSA1 nach Preis ab 1.74 EUR bis 3.1 EUR
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IPP126N10N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 100V Drain current: 58A On-state resistance: 12.6mΩ Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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IPP126N10N3GXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3 Mounting: THT Case: PG-TO220-3 Drain-source voltage: 100V Drain current: 58A On-state resistance: 12.6mΩ Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Kind of package: tube Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP126N10N3GXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 58A Automotive 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP126N10N3GXKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 58A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 46µA Supplier Device Package: PG-TO220-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
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