IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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Technische Details IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 120V 56A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4V @ 61µA, Power Dissipation (Max): 107W (Tc), Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IPP147N12N3GXKSA1 nach Preis ab 0.93 EUR bis 2.8 EUR
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IPP147N12N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 56A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 61µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 13495 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP147N12N3GXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 56A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 120V 56A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 13495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.8 EUR |
| 50+ | 1.35 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.93 EUR |