IPP16CN10NGXKSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2+ | 2.76 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.8 EUR |
| 2500+ | 1.66 EUR |
| 5000+ | 1.6 EUR |
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Technische Details IPP16CN10NGXKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 53A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4V @ 61µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IPP16CN10NGXKSA1 nach Preis ab 2.22 EUR bis 3.08 EUR
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IPP16CN10NGXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 100V 53A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 61µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 124 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP16CN10NGXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 53A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 53A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 53A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.08 EUR |
| 10+ | 2.76 EUR |
| 100+ | 2.22 EUR |