IPP17N25S3100AKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 250V 17A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 586 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 210+ | 2.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPP17N25S3100AKSA1 Infineon Technologies
Description: MOSFET N-CH 250V 17A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 54µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V.
Weitere Produktangebote IPP17N25S3100AKSA1 nach Preis ab 2.18 EUR bis 4.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPP17N25S3100AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A Mounting: THT Drain-source voltage: 250V Drain current: 13.3A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Technology: OptiMOS™ T Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 68A Case: PG-TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 483 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
IPP17N25S3100AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A Mounting: THT Drain-source voltage: 250V Drain current: 13.3A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Technology: OptiMOS™ T Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 68A Case: PG-TO220-3 |
auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
IPP17N25S3100AKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 250V 17A TO220-3 |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
IPP17N25S3100AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 250V 17A Automotive 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IPP17N25S3100AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 250V 17A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 54µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
Produkt ist nicht verfügbar |