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IPP339N20NM6AKSA1

IPP339N20NM6AKSA1 Infineon Technologies


Infineon-IPP339N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d327daa8a0f0a Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 52µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 552 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.65 EUR
50+3.29 EUR
100+3.17 EUR
500+2.4 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPP339N20NM6AKSA1 Infineon Technologies

Description: MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc), Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V, Power Dissipation (Max): 3.8W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 52µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.

Weitere Produktangebote IPP339N20NM6AKSA1 nach Preis ab 2.53 EUR bis 4.75 EUR

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IPP339N20NM6AKSA1 IPP339N20NM6AKSA1 Hersteller : Infineon Technologies Infineon_IPP339N20NM6_DataSheet_v02_00_EN.pdf MOSFETs TRENCH >=100V
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.75 EUR
10+3.84 EUR
25+3.5 EUR
100+3.24 EUR
250+3.08 EUR
500+2.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPP339N20NM6AKSA1 Hersteller : Infineon Technologies Infineon-IPP339N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d327daa8a0f0a IPP339N20NM6AKSA1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP339N20NM6AKSA1 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1FD08FF23D71E2C740DF&compId=IPP339N20NM6AKSA1.pdf?ci_sign=4057157b92ec495c3abc4f63258d596f369be238 Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 33.9mΩ
Mounting: THT
Gate charge: 15.9C
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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