auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.03 EUR |
| 10+ | 2.76 EUR |
| 100+ | 2.16 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.61 EUR |
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Technische Details IPP339N20NM6AKSA1 Infineon Technologies
Description: MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Power Dissipation (Max): 3.8W (Ta), 125W (Tc), Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc), Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V, Vgs(th) (Max) @ Id: 4.5V @ 52µA.
Weitere Produktangebote IPP339N20NM6AKSA1 nach Preis ab 2.4 EUR bis 4.65 EUR
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IPP339N20NM6AKSA1 | Hersteller : Infineon Technologies |
 Description: MOSFETPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 39A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 26A, 15V Vgs(th) (Max) @ Id: 4.5V @ 52µA |
auf Bestellung 552 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP339N20NM6AKSA1 | Hersteller : Infineon Technologies |
IPP339N20NM6AKSA1 |
Produkt ist nicht verfügbar |
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| IPP339N20NM6AKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 39A; Idm: 156A Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 200V Drain current: 39A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 33.9mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 15.9C Pulsed drain current: 156A |
Produkt ist nicht verfügbar |