IPP50R190CE Infineon Technologies

Description: POWER FIELD-EFFECT TRANSISTOR, 5, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V, Power Dissipation (Max): 152W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 510µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V.