auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.34 EUR |
| 10+ | 2.78 EUR |
| 100+ | 2.22 EUR |
| 250+ | 2.02 EUR |
| 500+ | 1.85 EUR |
| 1000+ | 1.59 EUR |
| 2500+ | 1.51 EUR |
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Technische Details IPP50R190CE Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 5, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V, Power Dissipation (Max): 152W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 510µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V.
Weitere Produktangebote IPP50R190CE
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPP50R190CE | Hersteller : Infineon |
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auf Bestellung 113500 Stücke: Lieferzeit 21-28 Tag (e) |
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IPP50R190CE | Hersteller : Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 5 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.8A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V Power Dissipation (Max): 152W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 510µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V |
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