IPP50R250CPXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 3.12 EUR |
| 27+ | 2.75 EUR |
| 30+ | 2.39 EUR |
| 32+ | 2.25 EUR |
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Technische Details IPP50R250CPXKSA1 INFINEON TECHNOLOGIES
Description: LOW POWER_LEGACY, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 520µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V.
Weitere Produktangebote IPP50R250CPXKSA1 nach Preis ab 1.27 EUR bis 4.01 EUR
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IPP50R250CPXKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 114W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 452 Stücke: Lieferzeit 7-14 Tag (e) |
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IPP50R250CPXKSA1 | Hersteller : Infineon Technologies |
Description: LOW POWER_LEGACY Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 520µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP50R250CPXKSA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 550V 13A TO220-3 |
auf Bestellung 231 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP50R250CPXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP50R250CPXKSA1 Produktcode: 185293
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Transistoren > MOSFET N-CH |
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IPP50R250CPXKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |