IPP60R099CPAAKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 31A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 57+ | 8.68 EUR |
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Technische Details IPP60R099CPAAKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 31A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V, Power Dissipation (Max): 255W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V.
Weitere Produktangebote IPP60R099CPAAKSA1 nach Preis ab 6.62 EUR bis 16.09 EUR
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IPP60R099CPAAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 31A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R099CPAAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 31A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R099CPAAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-220 Tube |
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IPP60R099CPAAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 31A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP60R099CPAAKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 31A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPP60R099CPAAKSA1 | Hersteller : Infineon Technologies |
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