IPP60R099CPXKSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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Technische Details IPP60R099CPXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 650V 31A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Power Dissipation (Max): 255W (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IPP60R099CPXKSA1 nach Preis ab 4.63 EUR bis 10.23 EUR
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IPP60R099CPXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 31A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 2703 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R099CPXKSA1 | Infineon Technologies |
MOSFETs N-Ch 650V 31A TO220-3 CoolMOS CP |
auf Bestellung 85 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP60R099CPXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 650V 31A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.35 EUR |
| 50+ | 5.8 EUR |
| 100+ | 5.57 EUR |
| 500+ | 4.63 EUR |
| IPP60R099CPXKSA1 |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 650V 31A TO220-3 CoolMOS CP
MOSFETs N-Ch 650V 31A TO220-3 CoolMOS CP
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.23 EUR |
| 10+ | 5.83 EUR |
| 100+ | 5.35 EUR |
| 500+ | 5.32 EUR |