IPP60R120P7 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IPP60R120P7 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 16A, Power dissipation: 95W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IPP60R120P7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPP60R120P7 | Hersteller : Infineon Technologies |
Description: 600V, 0.12OHM, N-CHANNEL MOSFET, Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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IPP60R120P7 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 95W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |