IPP60R120P7 Infineon Technologies
Hersteller: Infineon Technologies
Description: 600V, 0.12OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Part Status: Active
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Technische Details IPP60R120P7 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 16A, Power dissipation: 95W, Case: PG-TO220-3, On-state resistance: 0.12Ω, Mounting: THT, Kind of channel: enhancement, Technology: CoolMOS™ P7, Kind of package: tube, Gate-source voltage: ±20V.
Weitere Produktangebote IPP60R120P7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP60R120P7 | Hersteller : Infineon Technologies |
MOSFETs HIGH POWER_NEW |
Produkt ist nicht verfügbar |
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IPP60R120P7 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 95W Case: PG-TO220-3 On-state resistance: 0.12Ω Mounting: THT Kind of channel: enhancement Technology: CoolMOS™ P7 Kind of package: tube Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |

