IPP60R165CP Infineon Technologies
auf Bestellung 27 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 11.91 EUR |
10+ | 10.01 EUR |
25+ | 9.44 EUR |
100+ | 8.09 EUR |
250+ | 7.64 EUR |
500+ | 7.18 EUR |
1000+ | 6.14 EUR |
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Technische Details IPP60R165CP Infineon Technologies
Description: 21A, 600V, 0.165OHM, N-CHANNEL M, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 790µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V.
Weitere Produktangebote IPP60R165CP
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IPP60R165CP | Hersteller : Infineon technologies |
auf Bestellung 196 Stücke: Lieferzeit 21-28 Tag (e) |
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IPP60R165CP Produktcode: 86977 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IPP60R165CP | Hersteller : Infineon Technologies |
Description: 21A, 600V, 0.165OHM, N-CHANNEL M Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 790µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V |
Produkt ist nicht verfügbar |