IPP60R165CP Infineon Technologies
auf Bestellung 472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.20 EUR |
| 10+ | 5.40 EUR |
| 25+ | 4.80 EUR |
| 100+ | 4.19 EUR |
| 250+ | 3.85 EUR |
| 500+ | 3.56 EUR |
| 1000+ | 3.33 EUR |
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Technische Details IPP60R165CP Infineon Technologies
Description: 21A, 600V, 0.165OHM, N-CHANNEL M, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 790µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V.
Weitere Produktangebote IPP60R165CP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPP60R165CP | Hersteller : Infineon technologies |
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auf Bestellung 196 Stücke: Lieferzeit 21-28 Tag (e) |
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IPP60R165CP Produktcode: 86977
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IPP60R165CP | Hersteller : Infineon Technologies |
Description: 21A, 600V, 0.165OHM, N-CHANNEL M Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 790µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V |
Produkt ist nicht verfügbar |