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IPP60R1K4C6XKSA1

IPP60R1K4C6XKSA1 Infineon Technologies

ds_ipp60r1k4c6.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 3.2A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 12345 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
789+0.69 EUR
1000+0.61 EUR
10000+0.52 EUR
Mindestbestellmenge: 789
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Technische Details IPP60R1K4C6XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 3.2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V, Power Dissipation (Max): 28.4W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V.

Weitere Produktangebote IPP60R1K4C6XKSA1 nach Preis ab 0.81 EUR bis 0.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPP60R1K4C6XKSA1 IPP60R1K4C6XKSA1 Hersteller : Infineon Technologies DS_IPP60R1K4C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae0138b2b95bbb0f7e Description: MOSFET N-CH 600V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 12218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
568+0.81 EUR
Mindestbestellmenge: 568
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R1K4C6XKSA1 IPP60R1K4C6XKSA1 Hersteller : Infineon Technologies Infineon-IPP60R1K4C6-DS-v02_00-en-1026498.pdf MOSFET N-Ch 650V 3.2A TO220-3
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R1K4C6XKSA1 Hersteller : ROCHESTER ELECTRONICS INFNS19164-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - IPP60R1K4C6XKSA1 - IPP60R1K4 - 600V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 12218 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R1K4C6XKSA1 IPP60R1K4C6XKSA1 Hersteller : Infineon Technologies ds_ipp60r1k4c6.pdf Trans MOSFET N-CH 650V 3.2A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R1K4C6XKSA1 IPP60R1K4C6XKSA1 Hersteller : Infineon Technologies DS_IPP60R1K4C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae0138b2b95bbb0f7e Description: MOSFET N-CH 600V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH