IPP60R330P6XKSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Power Dissipation (Max): 93W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produktrezensionen
Produktbewertung abgeben
Technische Details IPP60R330P6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-3, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4.5V @ 370µA, Power Dissipation (Max): 93W (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.