IPP60R385CP Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 9A TO220-3-1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 525 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 229+ | 2.18 EUR |
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Technische Details IPP60R385CP Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220-3-1, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 340µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
|---|---|---|---|---|---|
| IPP60R385CP | Hersteller : INFINEON |
SOT-23 |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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IPP60R385CP | Hersteller : Infineon Technologies |
MOSFETs N-Ch 650V 9A TO220-3 CoolMOS CP |
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