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IPP60R385CPXKSA1

IPP60R385CPXKSA1 Infineon Technologies

IPP60R385CP_rev2.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c14154665
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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Technische Details IPP60R385CPXKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 9A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 340µA, Supplier Device Package: PG-TO220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V.

Weitere Produktangebote IPP60R385CPXKSA1

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IPP60R385CPXKSA1 IPP60R385CPXKSA1 Infineon Technologies Infineon_IPP60R385CP_DS_v02_02_en-3360009.pdf MOSFET LOW POWER_LEGACY
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IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES IPP60R385CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPP60R385CPXKSA1 Infineon_IPP60R385CP_DS_v02_02_en-3360009.pdf
IPP60R385CPXKSA1
Hersteller: Infineon Technologies
MOSFET LOW POWER_LEGACY
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Im Einkaufswagen  Stück im Wert von  UAH
IPP60R385CPXKSA1 IPP60R385CP-DTE.pdf
IPP60R385CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH