IPP60R450E6XKSA1 Infineon Technologies
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details IPP60R450E6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 9.2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 280µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V.
Weitere Produktangebote IPP60R450E6XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IPP60R450E6XKSA1 | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - IPP60R450E6XKSA1 - IPP60R450 - 600V COOLMOS N-CHANNEL POWERtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R450E6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 9.2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 280µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V |
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