IPP60R520E6XKSA1 Infineon Technologies
auf Bestellung 373 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 370+ | 1.49 EUR |
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Technische Details IPP60R520E6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 230µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V.
Weitere Produktangebote IPP60R520E6XKSA1 nach Preis ab 1.29 EUR bis 1.54 EUR
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IPP60R520E6XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 8.1A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R520E6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 8.1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 230µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V |
auf Bestellung 373 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP60R520E6XKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPP60R520E6XKSA1 - IPP60R520 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R520E6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 8.1A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP60R520E6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 8.1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 230µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPP60R520E6XKSA1 | Hersteller : Infineon Technologies |
MOSFET LOW POWER_LEGACY |
Produkt ist nicht verfügbar |
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IPP60R520E6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.1A; 66W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.1A Power dissipation: 66W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |