IPP60R600P6XKSA1 Infineon Technologies
auf Bestellung 19154 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 570+ | 0.97 EUR |
| 1000+ | 0.89 EUR |
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Technische Details IPP60R600P6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V.
Weitere Produktangebote IPP60R600P6XKSA1 nach Preis ab 0.89 EUR bis 1.03 EUR
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IPP60R600P6XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 83000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R600P6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 9479 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R600P6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 7.3A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V |
auf Bestellung 102154 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R600P6XKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPP60R600P6XKSA1 - IPP60R600 - 600V, 0.6OHM, N-CHANEL POWER tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
Produkt ist nicht verfügbar |
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IPP60R600P6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 7.3A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP60R600P6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 7.3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V |
Produkt ist nicht verfügbar |