auf Bestellung 293 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.89 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.9 EUR |
| 500+ | 1.06 EUR |
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Technische Details IPP60R600P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 80µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V.
Weitere Produktangebote IPP60R600P7XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IPP60R600P7XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP60R600P7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP60R600P7XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP60R600P7XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V |
Produkt ist nicht verfügbar |