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IPP60R750E6XKSA1

IPP60R750E6XKSA1 Infineon Technologies


41701159039399808ipd60r750e6_2.0_.pdffolderiddb3a3043156fd5730115c736bcc70ff2filei.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 5.7A 3-Pin(3+Tab) TO-220 Tube
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
467+1.18 EUR
Mindestbestellmenge: 467
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Technische Details IPP60R750E6XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 5.7A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 170µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V.

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IPP60R750E6XKSA1 Hersteller : ROCHESTER ELECTRONICS INFN-S-A0001299823-1.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - IPP60R750E6XKSA1 - IPP60R750 COOLMOS N-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R750E6XKSA1 IPP60R750E6XKSA1 Hersteller : Infineon Technologies 41701159039399808ipd60r750e6_2.0_.pdffolderiddb3a3043156fd5730115c736bcc70ff2filei.pdf Trans MOSFET N-CH 600V 5.7A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R750E6XKSA1 IPP60R750E6XKSA1 Hersteller : Infineon Technologies IPP60R750E6_2.0_.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a14dd54012a193e52402af5 Description: MOSFET N-CH 600V 5.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH