IPP60R950C6XKSA1 Infineon Technologies
auf Bestellung 2381 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 770+ | 0.72 EUR |
| 1000+ | 0.66 EUR |
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Technische Details IPP60R950C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 4.4A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 130µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V.
Weitere Produktangebote IPP60R950C6XKSA1 nach Preis ab 0.66 EUR bis 0.76 EUR
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IPP60R950C6XKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 4.4A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R950C6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 4.4A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 71000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R950C6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 4.4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V |
auf Bestellung 70770 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP60R950C6XKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPP60R950C6XKSA1 - IPP60R950 - 600V COOLMOS N-CHANNEL POWER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP60R950C6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
IPP60R950C6XKSA1 THT N channel transistors |
Produkt ist nicht verfügbar |
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IPP60R950C6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 4.4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V |
Produkt ist nicht verfügbar |