IPP65R110CFDAAKSA1 Infineon Technologies
auf Bestellung 1961 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.61 EUR |
| 10+ | 8.43 EUR |
| 25+ | 7.53 EUR |
| 100+ | 6.58 EUR |
| 250+ | 5.98 EUR |
| 500+ | 5.17 EUR |
| 2500+ | 5.10 EUR |
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Technische Details IPP65R110CFDAAKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V, Power Dissipation (Max): 277.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.3mA, Supplier Device Package: PG-TO220-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote IPP65R110CFDAAKSA1 nach Preis ab 7.21 EUR bis 13.88 EUR
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IPP65R110CFDAAKSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 650V 31.2A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R110CFDAAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 31.2A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP65R110CFDAAKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP65R110CFDAAKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 31.2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO220-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |