IPP65R110CFDXKSA2 Infineon Technologies
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 127+ | 4.40 EUR |
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Technische Details IPP65R110CFDXKSA2 Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V, Power Dissipation (Max): 277.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.3mA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V.
Weitere Produktangebote IPP65R110CFDXKSA2 nach Preis ab 4.63 EUR bis 9.57 EUR
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IPP65R110CFDXKSA2 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 650V 31.2A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R110CFDXKSA2 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP65R110CFDXKSA2 | Hersteller : Infineon Technologies |
MOSFETs HIGH POWER_LEGACY |
Produkt ist nicht verfügbar |