auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.05 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.46 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.78 EUR |
| 2500+ | 1.68 EUR |
| 5000+ | 1.63 EUR |
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Technische Details IPP65R190C7 Infineon Technologies
Description: IPP65R190 - 650V AND 700V COOLMO, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 4V @ 290µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V.
Weitere Produktangebote IPP65R190C7 nach Preis ab 3.9 EUR bis 5.67 EUR
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| IPP65R190C7 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP65R190C7 | Hersteller : Infineon technologies |
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auf Bestellung 435 Stücke: Lieferzeit 21-28 Tag (e) |
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IPP65R190C7 | Hersteller : Infineon Technologies |
Description: IPP65R190 - 650V AND 700V COOLMO Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 290µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V |
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