IPP65R190E6XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 650V 20.2A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 169+ | 2.75 EUR |
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Technische Details IPP65R190E6XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 20.2A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 730µA, Supplier Device Package: PG-TO220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V.
Weitere Produktangebote IPP65R190E6XKSA1 nach Preis ab 2.68 EUR bis 2.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP65R190E6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R190E6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 555 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R190E6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R190E6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 716 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R190E6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R190E6XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 20.2A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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IPP65R190E6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.2A Power dissipation: 151W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPP65R190E6XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 20.2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 730µA Supplier Device Package: PG-TO220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPP65R190E6XKSA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 700V 20.2A TO220-3 |
Produkt ist nicht verfügbar |
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IPP65R190E6XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.2A Power dissipation: 151W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |