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IPP65R280E6XKSA1 ROCHESTER ELECTRONICS


INFNS15875-1.pdf?t.download=true&u=5oefqw Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IPP65R280E6XKSA1 - IPP65R280 650V AND 700V COOLMOS N-CHANN
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
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Technische Details IPP65R280E6XKSA1 ROCHESTER ELECTRONICS

Description: MOSFET N-CH 650V 13.8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 440µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.

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IPP65R280E6XKSA1 IPP65R280E6XKSA1 Hersteller : Infineon Technologies ipb65r280e6_2_0.pdf Trans MOSFET N-CH 700V 13.8A 3-Pin(3+Tab) TO-220 Tube
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IPP65R280E6XKSA1 IPP65R280E6XKSA1 Hersteller : Infineon Technologies IPP65R280E6_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432a7fedfc012a9e060bb10747 Description: MOSFET N-CH 650V 13.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH