IPP65R420CFDXKSA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 223+ | 3 EUR |
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Technische Details IPP65R420CFDXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V, Power Dissipation (Max): 83.3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 340µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V.
Weitere Produktangebote IPP65R420CFDXKSA1 nach Preis ab 2.09 EUR bis 3.37 EUR
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IPP65R420CFDXKSA1 | Infineon Technologies |
 Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 24500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R420CFDXKSA1 | Infineon Technologies |
Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 5500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R420CFDXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V |
auf Bestellung 30333 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPP65R420CFDXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 24500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 223+ | 3 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.4 EUR |
| 10000+ | 2.09 EUR |
| IPP65R420CFDXKSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 5500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 223+ | 3 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.4 EUR |
| IPP65R420CFDXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Description: MOSFET N-CH 650V 8.7A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 30333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 178+ | 3.37 EUR |