IPP65R420CFDXKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 8.7A TO220-3, Vgs(th) (Max) @ Id: 4.5V @ 340µA, Power Dissipation (Max): 83.3W (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3.