IPP70N04S406AKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_(20V,40V)
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 49890 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 304+ | 1.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPP70N04S406AKSA1 Infineon Technologies
Description: MOSFET N-CH 40V 70A TO220-3-1, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 4V @ 26µA, Supplier Device Package: PG-TO220-3-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPP70N04S406AKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IPP70N04S406AKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 70A Automotive 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|
 |
IPP70N04S406AKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 70A TO220-3-1 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |