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IPP80R280P7 Infineon / IR



Hersteller: Infineon / IR
MOSFET LOW POWER_NEW
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Technische Details IPP80R280P7 Infineon / IR

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3; ESD, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 10.6A, Power dissipation: 101W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 0.28Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 36nC, Version: ESD.

Weitere Produktangebote IPP80R280P7

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IPP80R280P7XKSA1 IPP80R280P7XKSA1 INFINEON TECHNOLOGIES IPP80R280P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP80R280P7XKSA1 IPP80R280P7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.6A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH