IPP90R340C3XKSA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - IPP90R340C3XKSA1 - IPP90R340 - 900V COOLMOS POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 692 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
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Technische Details IPP90R340C3XKSA1 ROCHESTER ELECTRONICS
Description: MOSFET N-CH 900V 15A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V.
Weitere Produktangebote IPP90R340C3XKSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPP90R340C3XKSA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 900V 15A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP90R340C3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: THT Kind of channel: enhancement Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPP90R340C3XKSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 900V 15A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPP90R340C3XKSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 900V 10A TO220-3 CoolMOS C3 |
Produkt ist nicht verfügbar |
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IPP90R340C3XKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 208W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: THT Kind of channel: enhancement Polarisation: unipolar Kind of package: tube |
Produkt ist nicht verfügbar |