IPP90R800C3XKSA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 900V 6.9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.17 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.76 EUR |
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Technische Details IPP90R800C3XKSA2 Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 460µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Weitere Produktangebote IPP90R800C3XKSA2 nach Preis ab 1.5 EUR bis 4.4 EUR
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IPP90R800C3XKSA2 | Hersteller : Infineon Technologies |
MOSFETs LOW POWER_LEGACY |
auf Bestellung 477 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP90R800C3XKSA2 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; 900V; 6.9A; 104W; TO220-3 Type of transistor: N-MOSFET Technology: MOSFET Drain-source voltage: 900V Drain current: 6.9A Power dissipation: 104W Case: TO220-3 Gate-source voltage: 20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 42nC Kind of channel: enhancement |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP90R800C3XKSA2 | Hersteller : Infineon Technologies |
Power Mosfet |
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