IPP90R800C3XKSA2 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 6.9A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6.9A
Power dissipation: 104W
Case: TO220-3
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 42nC
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Technische Details IPP90R800C3XKSA2 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 900V 6.9A TO220-3, Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 3.5V @ 460µA, Power Dissipation (Max): 104W (Tc).
Weitere Produktangebote IPP90R800C3XKSA2 nach Preis ab 1.65 EUR bis 5.95 EUR
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IPP90R800C3XKSA2 | Infineon Technologies |
Description: MOSFET N-CH 900V 6.9A TO220-3 Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 3.5V @ 460µA Power Dissipation (Max): 104W (Tc) |
auf Bestellung 484 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP90R800C3XKSA2 | Infineon Technologies |
MOSFETs LOW POWER_LEGACY |
auf Bestellung 456 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP90R800C3XKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO220-3
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Power Dissipation (Max): 104W (Tc)
Description: MOSFET N-CH 900V 6.9A TO220-3
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Power Dissipation (Max): 104W (Tc)
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.96 EUR |
| 10+ | 4.13 EUR |
| 100+ | 3.28 EUR |
| IPP90R800C3XKSA2 |
|
Hersteller: Infineon Technologies
MOSFETs LOW POWER_LEGACY
MOSFETs LOW POWER_LEGACY
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.95 EUR |
| 10+ | 3.22 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.83 EUR |
| 2500+ | 1.8 EUR |
| 5000+ | 1.65 EUR |