IPQC60R010S7AXTMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.86 EUR |
| 10+ | 23.79 EUR |
| 100+ | 21.84 EUR |
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Technische Details IPQC60R010S7AXTMA1 Infineon Technologies
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3.08mA, Supplier Device Package: PG-HDSOP-22, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V, Qualification: AEC-Q101.
Weitere Produktangebote IPQC60R010S7AXTMA1 nach Preis ab 26.00 EUR bis 38.97 EUR
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IPQC60R010S7AXTMA1 | Hersteller : Infineon Technologies |
MOSFET AUTOMOTIVE_COOLMOS |
auf Bestellung 714 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60R010S7AXTMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 50A 22-Pin HDSOP EP T/R Automotive AEC-Q101 |
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IPQC60R010S7AXTMA1 | Hersteller : Infineon Technologies |
Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |