| Anzahl | Preis |
|---|---|
| 1+ | 20.05 EUR |
| 10+ | 17.62 EUR |
| 25+ | 17.6 EUR |
| 100+ | 15.22 EUR |
| 250+ | 14.75 EUR |
| 750+ | 13.99 EUR |
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Technische Details IPQC60R017S7XTMA1 Infineon Technologies
Description: MOSFET, Mounting Type: Surface Mount, Package / Case: 22-PowerBSOP Module, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 12V, Supplier Device Package: PG-HDSOP-22, Vgs(th) (Max) @ Id: 4.5V @ 1.89mA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote IPQC60R017S7XTMA1 nach Preis ab 15.54 EUR bis 20.96 EUR
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IPQC60R017S7XTMA1 | Infineon Technologies |
 Description: MOSFETInput Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 4.5V @ 1.89mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) |
auf Bestellung 731 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60R017S7XTMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 731 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.96 EUR |
| 10+ | 18.41 EUR |
| 100+ | 15.54 EUR |