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IPS20N03L G

IPS20N03L G Infineon Technologies

fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO251-3
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PG-TO251-3-11
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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Technische Details IPS20N03L G Infineon Technologies

Description: MOSFET N-CH 30V 30A TO251-3, Drain to Source Voltage (Vdss): 30 V, Supplier Device Package: PG-TO251-3-11, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.