IPS60R1K0PFD7SAKMA1 Infineon Technologies

Description: MOSFET N-CH 650V 4.7A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: PG-TO251-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V.