IPS60R1K0PFD7SAKMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 650V 4.7A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V
auf Bestellung 64370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 774+ | 0.6 EUR |
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Technische Details IPS60R1K0PFD7SAKMA1 Infineon Technologies
Description: MOSFET N-CH 650V 4.7A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: PG-TO251-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V.
Weitere Produktangebote IPS60R1K0PFD7SAKMA1 nach Preis ab 1.04 EUR bis 1.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IPS60R1K0PFD7SAKMA1 | Hersteller : Infineon |
Transistors - FETs, MOSFETs - Single IPS60R1K0PFD7SAKMA1 IPS60R1K0PFD7S TIPS60r1k0pfd7s Anzahl je Verpackung: 10 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| IPS60R1K0PFD7SAKMA1 | Hersteller : Infineon Technologies |
MOSFET CONSUMER |
auf Bestellung 899 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPS60R1K0PFD7SAKMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPS60R1K0PFD7SAKMA1 - IPS60R1K0PFD7S - CONSUMER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 43500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPS60R1K0PFD7SAKMA1 | Hersteller : Infineon Technologies |
SP003493708 |
Produkt ist nicht verfügbar |
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IPS60R1K0PFD7SAKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 4.7A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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IPS60R1K0PFD7SAKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 4.7A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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IPS60R1K0PFD7SAKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 4.7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 10V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 400 V |
Produkt ist nicht verfügbar |