IPS60R210PFD7SAKMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 650V 16A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 5569 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 296+ | 1.58 EUR |
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Technische Details IPS60R210PFD7SAKMA1 Infineon Technologies
Description: MOSFET N-CH 650V 16A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V, Power Dissipation (Max): 64W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 240µA, Supplier Device Package: PG-TO251-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V.
Weitere Produktangebote IPS60R210PFD7SAKMA1 nach Preis ab 1.46 EUR bis 4.42 EUR
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IPS60R210PFD7SAKMA1 | Hersteller : Infineon Technologies |
MOSFET CONSUMER |
auf Bestellung 722 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPS60R210PFD7SAKMA1 | Hersteller : Infineon |
Transistors - FETs, MOSFETs - Single IPS60R210PFD7SAKMA1 IPS60R210PFD7S TIPS60r210pfd7s Anzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| IPS60R210PFD7SAKMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPS60R210PFD7SAKMA1 - IPS60R210PFD7S - CONSUMER tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 4069 Stücke: Lieferzeit 14-21 Tag (e) |
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IPS60R210PFD7SAKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) IPAK SL Tube |
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IPS60R210PFD7SAKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) IPAK SL Tube |
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IPS60R210PFD7SAKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) IPAK SL Tube |
Produkt ist nicht verfügbar |
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IPS60R210PFD7SAKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 16A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 240µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V |
Produkt ist nicht verfügbar |