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IPS60R2K1CEAKMA1 Infineon Technologies

Infineon-IPS60R2K1CE-DS-v02_00-EN-1732070.pdf Hersteller: Infineon Technologies
MOSFET CONSUMER
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Technische Details IPS60R2K1CEAKMA1 Infineon Technologies

Description: CONSUMER, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Tj), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V.

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IPS60R2K1CEAKMA1 Hersteller : ROCHESTER ELECTRONICS Infineon-IPS60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537af0473b761e Description: ROCHESTER ELECTRONICS - IPS60R2K1CEAKMA1 - IPS60R2K1 COOLMOS N-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 60140 Stücke:
Lieferzeit 14-21 Tag (e)
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IPS60R2K1CEAKMA1 IPS60R2K1CEAKMA1 Hersteller : Infineon Technologies Infineon-IPS60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537af0473b761e Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tj)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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