auf Bestellung 2779 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.28 EUR |
| 10+ | 1.10 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.65 EUR |
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Technische Details IPS60R3K4CEAKMA1 Infineon Technologies
Description: CONSUMER, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V, Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: PG-TO251-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V.
Weitere Produktangebote IPS60R3K4CEAKMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IPS60R3K4CEAKMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 600V 2.6A 4-Pin(3+Tab) TO-251 Tube |
Produkt ist nicht verfügbar |
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IPS60R3K4CEAKMA1 | Hersteller : Infineon Technologies |
Description: CONSUMER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V |
Produkt ist nicht verfügbar |