auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.46 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.64 EUR |
| 1500+ | 0.61 EUR |
| 4500+ | 0.58 EUR |
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Technische Details IPS60R600PFD7SAKMA1 Infineon Technologies
Description: MOSFET N-CH 650V 6A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 80µA, Supplier Device Package: PG-TO251-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V.
Weitere Produktangebote IPS60R600PFD7SAKMA1 nach Preis ab 2.03 EUR bis 2.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| IPS60R600PFD7SAKMA1 | Hersteller : Infineon |
 Mosfet, N-Ch, 600V, 6A IPS60R600PFD7SAKMA1 IPS60R600PFD7S TIPS60r600pfd7sAnzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| IPS60R600PFD7SAKMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IPS60R600PFD7SAKMA1 - IPS60R600PFD7S 600V COOLMOS PFD7 SUPERJ tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 13500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPS60R600PFD7SAKMA1 | Hersteller : Infineon Technologies |
SP004748880 |
Produkt ist nicht verfügbar |
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IPS60R600PFD7SAKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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IPS60R600PFD7SAKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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IPS60R600PFD7SAKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 6A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 80µA Supplier Device Package: PG-TO251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V |
Produkt ist nicht verfügbar |